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1

Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures

N. S. Averkiev, S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin, I. S. Tarasov

Journal:

Year:

2007

Language:

english

File:

PDF, 192 KB

english, 2007

2

Temperature dependence of the refractive index in semiconductors

Bertolotti, Mario, Bogdanov, Victor, Ferrari, Aldo, Jascow, Andrei, Nazorova, Natalia, Pikhtin, Alexander, Schirone, Luigi

Journal:

Journal of the Optical Society of America B

Year:

1990

Language:

english

File:

PDF, 433 KB

english, 1990

3

A highly UV-selective Schottky-barrier photodiode based on a Ag–GaP contact

R. Mientus, R. Wolf, B. Kloth, M. Protsch, A.N. Pikhtin

Journal:

Surface and Coatings Technology

Year:

1999

Language:

english

File:

PDF, 249 KB

english, 1999

4

Energy band structure and optical properties of CdSnP2

A. N. Pikhtin, V. N. Razbegaev, N. A. Goryunova, E. I. Leonov, V. M. Orlov, G. F. Karavaev, A. S. Poplavnoi, V. A. Chaldyshev

Journal:

physica status solidi (a)

Year:

1971

Language:

english

File:

PDF, 429 KB

english, 1971

5

The properties of InGaAsP/InP heterolasers with step-divergent waveguides

E. G. Golikova, V. A. Kureshov, A. Yu. Leshko, D. A. Livshits, A. V. Lyutetskii, D. N. Nikolaev, N. A. Pikhtin, Yu. A. Ryaboshtan, S. O. Slipchenko, I. S. Tarasov, N. V. Fetisova

Journal:

Technical Physics Letters

Year:

2000

Language:

english

File:

PDF, 43 KB

english, 2000

6

On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers

A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, G. V. Skrynnikov, Z. N. Sokolova, I. S. Tarasov, N. V. Fetisova

Journal:

Year:

2000

Language:

english

File:

PDF, 66 KB

english, 2000

7

Internal quantum efficiency of stimulated emission of (λ=1.55 µm) InGaAsP/InP laser diodes

G. V. Skrynnikov, G. G. Zegrya, N. A. Pikhtin, S. O. Slipchenko, V. V. Shamakhov, I. S. Tarasov

Journal:

Year:

2003

Language:

english

File:

PDF, 70 KB

english, 2003

8

Fundamental absorption edge of semiconductor alloys with the direct-gap energy-band structure

A. N. Pikhtin, H. H. Hegazy

Journal:

Year:

2009

Language:

english

File:

PDF, 264 KB

english, 2009

9

Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

A. N. Petrunov, A. A. Podoskin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, T. A. Nalet, N. V. Fetisova, L. S. Vavilova, A. V. Lyutetskiy, P. A. Alekseev, A. N. Titkov, I. S. Tarasov

Journal:

Year:

2010

Language:

english

File:

PDF, 548 KB

english, 2010

10

Ag-GaP Schottky photodiodes for UV sensors

Pikhtin, A.N., Tarasov, S.A., Kloth, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 273 KB

english, 2003

11

High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength

Slipchenko, Sergey O., Podoskin, Aleksandr A., Rozhkov, Alexsander V., Pikhtin, Nikita A., Tarasov, Ilya S., Bagaev, Timur A., Zverkov, Mikhail V., Konyaev, Vadim P., Kurniavko, Yuriy V., Ladugin, Max

Journal:

IEEE Photonics Technology Letters

Year:

2013

Language:

english

File:

PDF, 469 KB

english, 2013

12

[IEEE Conference Digest. 2004 IEEE 19th International Semiconductor Laser Conference - Matsue-shi, Japan (21-25 Sept. 2004)] 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. - 16 W CW output power from 100-μm aperture laser based on quantum well asymmetric heterostructure with lowest internal loss

Tarasov, I.S., Pikhtin, N.A., SIipchenko, S.O., Sokolova, Z.N., Vinokurov, D.A.

Year:

2004

Language:

english

File:

PDF, 169 KB

english, 2004

13

High-Power Laser Thyristors With High Injection Efficiency ( $\lambda =890$ –910 nm)

Slipchenko, Sergey O., Podoskin, Aleksandr A., Rozhkov, Alexsander V., Pikhtin, Nikita A., Tarasov, Ilya S., Bagaev, Timur A., Ladugin, Maxim A., Marmalyuk, Aleksandr A., Padalitsa, Anatoliy A., Simak

Journal:

IEEE Photonics Technology Letters

Year:

2015

Language:

english

File:

PDF, 903 KB

english, 2015

14

Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact

Slipchenko, Sergey O., Podoskin, Aleksandr A., Soboleva, Olga S., Pikhtin, Nikita A., Bagaev, Timur A., Ladugin, Maxim A., Marmalyuk, Aleksandr A., Simakov, Vladimir A., Tarasov, Il’ya S.

Journal:

Year:

2016

Language:

english

File:

PDF, 4.23 MB

english, 2016

15

Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

Sokolova, Z. N., Bakhvalov, K. V., Lyutetskiy, A. V., Pikhtin, N. A., Tarasov, I. S., Asryan, L. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 227 KB

english, 2016

16

A laser unit for photodynamic therapy and robot-assisted microsurgery in dentistry

Chunikhin, A. A., Bazikyan, E. A., Pikhtin, N. A.

Journal:

Technical Physics Letters

Year:

2017

Language:

english

File:

PDF, 414 KB

english, 2017

17

Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR

Zolotarev, V V, Leshko, A Yu, Shamakhov, V V, Nikolaev, D N, Golovin, V S, Slipchenko, S O, Pikhtin, N A

Journal:

Semiconductor Science and Technology

Year:

2020

Language:

english

File:

PDF, 941 KB

english, 2020

18

Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR

Zolotarev, V V, Leshko, A Yu, Shamakhov, V V, Nikolaev, D N, Golovin, V S, Slipchenko, S O, Pikhtin, N A

Journal:

Semiconductor Science and Technology

Year:

2020

File:

PDF, 941 KB

2020

19

Measurements of internal optical loss inside an operating laser diode

Veselov, D. A., Bobretsova, Yu. K., Leshko, A. Y., Shamakhov, V. V., Slipchenko, S. O., Pikhtin, N. A.

Journal:

Journal of Applied Physics

Year:

2019

File:

PDF, 2.83 MB

2019

20

Simulation of Photoreflectance and Phototransmittance Excitonic Spectra Applied to Quantum Well Characterization

O. L. Lazarenkova, A. N. Pikhtin

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 173 KB

english, 1999

21

Shallow impurity states and the free exciton binding energy in gallium phosphide

A.A. Kopylov, A.N. Pikhtin

Journal:

Solid State Communications

Year:

1978

Language:

english

File:

PDF, 380 KB

english, 1978

22

Indirect exciton dispersion in III–V semiconductors: “Camel's back” in GaP

G.F. Glinskii, A.A. Kopylov, A.N. Pikhtin

Journal:

Solid State Communications

Year:

1979

Language:

english

File:

PDF, 297 KB

english, 1979

23

High power CW (16 W) and pulse (145 W) laser diodes based on quantum well heterostructures

Ilya S. Tarasov, Nikita A. Pikhtin, Sergey O. Slipchenko, Zinaida N. Sokolova, Dmitry A. Vinokurov, Kirill S. Borschev, Vladimir A. Kapitonov, Maxim A. Khomylev, Andrey Yu. Leshko, Andrey V. Lyutetski

Journal:

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Year:

2007

Language:

english

File:

PDF, 324 KB

english, 2007

24

Acousto-electron interaction in InGaAsP/InP laser heterostructures

L.A. Kulakova, A.V. Lyutetskiy, N.A. Pikhtin, I.S. Tarasov, E.Z. Yakhkind

Journal:

Year:

2006

Language:

english

File:

PDF, 241 KB

english, 2006

25

Simulation of excitonic spectra in electric field to characterize the quality of low dimensional structures

O.L., A.N. Pikhtin

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 124 KB

english, 2000

26

Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo- and electroreflectance methods

A. N. Pikhtin, O. S. Komkov, F. Bugge

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 234 KB

english, 2005

27

Excitonic effects and Franz–Keldysh oscillations in photoreflectance of ultrapure GaAs epilayers

O. S. Komkov, G. F. Glinskii, A. N. Pikhtin, Y. K. Ramgolam

Journal:

physica status solidi (a)

Year:

2009

Language:

english

File:

PDF, 348 KB

english, 2009

28

Cathodoluminescence of undoped and Zn-doped GaN epitaxial layers

L. A. Marasina, A. N. Pikhtin, I. G. Pichugin, A. V. Solomonov

Journal:

physica status solidi (a)

Year:

1976

Language:

english

File:

PDF, 470 KB

english, 1976

29

Radiative recombination in ZnN-doped GaAs1−xPx: N mixed crystals

R. Stelgmann, W. N. Rasbegaev, A. N. Pikhtin

Journal:

physica status solidi (a)

Year:

1987

Language:

english

File:

PDF, 441 KB

english, 1987

30

Determination of the nitrogen concentration in VPE-GaAs1–xPx

B. Kloth, M. V. Lupal, A. N. Pikhtin, C. E. Richter, R. Ries, R. Stegmann, M. Trapp

Journal:

physica status solidi (a)

Year:

1987

Language:

english

File:

PDF, 479 KB

english, 1987

31

Infrared Absorption in Gallium Phosphide

A. N. Pikhtin, D. A. Yaskov

Journal:

physica status solidi (b)

Year:

1969

Language:

english

File:

PDF, 534 KB

english, 1969

32

No-phonon and phonon-assisted exciton absorption in GaAs1 − x, Px with indirect energy gap

A. N. Pikhtin, V. N. Razbegaev, D. A. Yaskov

Journal:

physica status solidi (b)

Year:

1972

Language:

english

File:

PDF, 543 KB

english, 1972

33

Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures

P.V. Bulaev, A.A. Marmalyuk, A.A. Padalitsa, D.B. Nikitin, I.D. Zalevsky, V.A. Kapitonov, D.N. Nikolaev, N.A. Pikhtin, A.V. Lyutetskiy, I.S. Tarasov

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 104 KB

english, 2003

34

Excitonic effects in the photoconductivity of quantum-well GaxIn1−xAs/InP structures

M. F. Panov, A. N. Pikhtin

Journal:

Year:

1997

Language:

english

File:

PDF, 59 KB

english, 1997

35

Self-organizing nanoheterostructures in InGaAsP solid solutions

L. S. Vavilova, A. V. Ivanova, V. A. Kapitonov, A. V. Murashova, I. S. Tarasov, I. N. Arsent’ev, N. A. Bert, Yu. G. Musikhin, N. A. Pikhtin, N. N. Faleev

Journal:

Year:

1998

Language:

english

File:

PDF, 150 KB

english, 1998

36

Energy spectrum of a nonideal quantum well in an electric field

O. L. Lazarenkova, A. N. Pikhtin

Journal:

Year:

1998

Language:

english

File:

PDF, 162 KB

english, 1998

37

Spontaneously forming periodic composition-modulated InGaAsP structures

N. A. Bert, L. S. Vavilova, I. P. Ipatova, V. A. Kapitonov, A. V. Murashova, N. A. Pikhtin, A. A. Sitnikova, I. S. Tarasov, V. A. Shchukin

Journal:

Year:

1999

Language:

english

File:

PDF, 427 KB

english, 1999

38

Spontaneously assembling periodic composition-modulated InGaAsP structures

L. S. Vavilova, V. A. Kapitonov, A. V. Murashova, N. A. Pikhtin, I. S. Tarasov, I. P. Ipatova, V. A. Shchukin, N. A. Bert, A. A. Sitnikova

Journal:

Year:

1999

Language:

english

File:

PDF, 721 KB

english, 1999

39

Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1−xAs/p-AlyGa1−yAs fromC-Vmeasurements

V. I. Zubkov, M. A. Mel’nik, A. V. Solomonov, A. N. Pikhtin, F. Bugge

Journal:

Year:

1999

Language:

english

File:

PDF, 73 KB

english, 1999

40

Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures

L. S. Vavilova, V. A. Kapitonov, D. A. Livshits, A. V. Lyutetskii, A. V. Murashova, N. A. Pikhtin, G. V. Skrynnikov, I. S. Tarasov

Journal:

Year:

2000

Language:

english

File:

PDF, 67 KB

english, 2000

41

Properties of wide-mesastripe InGaAsP/InP lasers

E. G. Golikova, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, G. A. Skrynnikov, I. S. Tarasov, Zh. I. Alferov

Journal:

Year:

2000

Language:

english

File:

PDF, 57 KB

english, 2000

42

Two-section InGaAsP/InP Fabry-Perot laser with a 12 nm tuning range

N. A. Pikhtin, A. Yu. Leshko, A. V. Lyutetskii, V. B. Khalfin, N. V. Shuvalova, Yu. V. Il’in, I. S. Tarasov

Journal:

Technical Physics Letters

Year:

1997

Language:

english

File:

PDF, 106 KB

english, 1997

43

Phototransmittance involving bound excitons in GaP(N) and GaAs1−xPx(N).

A. N. Ivkin, A. N. Pikhtin

Journal:

Technical Physics Letters

Year:

1998

Language:

english

File:

PDF, 80 KB

english, 1998

44

Multiwell laser heterostructures fabricated by liquid-phase epitaxy

A. Yu. Leshko, A. V. Lyutetskii, A. V. Murashova, N. A. Pikhtin, I. S. Tarasov, I. N. Arsent’ev, B. Ya. Ber, Yu. A. Kudryavtsev, Yu. V. Il’in, N. V. Fetisova

Journal:

Technical Physics Letters

Year:

1998

Language:

english

File:

PDF, 72 KB

english, 1998

45

Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics

L. Ya. Karachinskii, A. M. Georgievskii, N. A. Pikhtin, S. V. Zaitsev, I. S. Tarasov, P. S. Kop’ev

Journal:

Technical Physics Letters

Year:

1999

Language:

english

File:

PDF, 63 KB

english, 1999

46

High-power broad-band single-mode InGaAsP/InP superluminescent diode

N. A. Pikhtin, Yu. V. Il’in, A. Yu. Leshko, A. V. Lyutetskii, A. L. Stankevich, I. S. Tarasov, N. V. Fetisova

Journal:

Technical Physics Letters

Year:

1999

Language:

english

File:

PDF, 47 KB

english, 1999

47

Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds

E. G. Golikova, V. A. Gorbylev, N. Yu. Davidyuk, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, V. A. Simakov, I. S. Tarasov, N. V. Fetisova

Journal:

Technical Physics Letters

Year:

2000

Language:

english

File:

PDF, 43 KB

english, 2000

48

Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds

E. G. Golikova, V. A. Gorbylev, Yu. V. Il’in, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, V. A. Simakov, I. S. Tarasov, E. A. Tret’yakova, N. V. Fetisova

Journal:

Technical Physics Letters

Year:

2000

Language:

english

File:

PDF, 52 KB

english, 2000

49

Threshold characteristics of λ=1.55 µm InGaAsP/InP heterolasers

G. G. Zegrya, N. A. Pikhtin, G. V. Skrynnikov, S. O. Slipchenko, I. S. Tarasov

Journal:

Year:

2001

Language:

english

File:

PDF, 96 KB

english, 2001

50

MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes

D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, A. L. Stankevich, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, I. N. Arsent’ev, I. S. Tarasov

Journal:

Year:

2001

Language:

english

File:

PDF, 235 KB

english, 2001